Product list of Anshan leadsun Electronics Co.,Ltd

CL08-10T High Voltage Diode 10KV 500mA

CL08-10T

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL08-10C High Voltage Diode 10KV 200mA

CL08-10C

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL03-15C High Voltage Diode 15KV 200mA

CL03-15C

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL03-18C High Voltage Diode 18KV 200mA

CL03-18C

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

UX-F8D High Voltage Diode 8KV 500mA

UX-F8D

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL75A High Voltage Diode 16KV 5mA

2CL75A

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL74 High Voltage Diode 14KV 5mA

2CL74

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL73 High Voltage Diode 12KV 5mA

2CL73

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL72 High Voltage Diode 10KV 5mA

2CL72

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL71A High Voltage Diode 8KV 5mA

2CL71A

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...