Product list of Anshan leadsun Electronics Co.,Ltd

2CL77 High Voltage Diode 20KV 5mA

2CL77

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL75 High Voltage Diode 16KV 5mA

2CL75

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL01-12 High Voltage Diode 12KV 350mA

CL01-12

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL04-12 High Voltage Diode 12KV 350mA

CL04-12

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL2FM High Voltage Diode 20KV 100mA

2CL2FM

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL2FL High Voltage Diode 15KV 100mA

2CL2FL

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL70A High Voltage Diode 6KV 5mA

2CL70A

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

HV-6X2P1 High Voltage Diode

HV-6X2P1

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL03-15T High Voltage Diode 15KV 300mA

CL03-15T

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL08-08T High Voltage Diode 8KV 500mA

CL08-08T

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...