Product list of Anshan leadsun Electronics Co.,Ltd

2CL77 High Voltage Diode 20KV 5mA

2CL77

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL75 High Voltage Diode 16KV 5mA

2CL75

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL01-12 High Voltage Diode 12KV 350mA

CL01-12

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL04-12 High Voltage Diode 12KV 350mA

CL04-12

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL2FM High Voltage Diode 20KV 100mA

2CL2FM

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL2FL High Voltage Diode 15KV 100mA

2CL2FL

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL70A High Voltage Diode 6KV 5mA

2CL70A

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

HV-6X2P1 High Voltage Diode

HV-6X2P1

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL03-15T High Voltage Diode 15KV 300mA

CL03-15T

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL08-08T High Voltage Diode 8KV 500mA

CL08-08T

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL08-10T High Voltage Diode 10KV 500mA

CL08-10T

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL08-10C High Voltage Diode 10KV 200mA

CL08-10C

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL03-15C High Voltage Diode 15KV 200mA

CL03-15C

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL03-18C High Voltage Diode 18KV 200mA

CL03-18C

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

UX-F8D High Voltage Diode 8KV 500mA

UX-F8D

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL75A High Voltage Diode 16KV 5mA

2CL75A

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL74 High Voltage Diode 14KV 5mA

2CL74

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL73 High Voltage Diode 12KV 5mA

2CL73

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL72 High Voltage Diode 10KV 5mA

2CL72

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL71A High Voltage Diode 8KV 5mA

2CL71A

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL18KV/20mA High Voltage Diode 18KV 20mA

2CL18KV/20mA

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL20KV/20mA High Voltage Diode 20KV 20mA

2CL20KV/20mA

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL01-09 High Voltage Diode 9KV 350mA

CL01-09

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL04-15 High Voltage Diode 15KV 500mA

CL04-15

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

CL01-12D High Voltage Diode 12KV 350mA

CL01-12D

Using the world's latest high-voltage rectifiers level design process, its basic features are the number of mesa-type silicon chips stacked together, in order to achieve a layered cell structure of high pressure, using a unique new PN junction passiva...

2CL(30-450)KV/0.05A High Voltage Rectifier Block

2CL(30-450)KV/0.05A

Type Peak reverse repetitive voltage VRRM Forward average rectifier current If（AV) Max forward voltage Vfm Max forward surge current Ifsm Normal temperature leakage current Irrm Time of reverse recovery trr Dimension Type KV A V A μA...

2CL(20-300)KV/0.1A High Voltage Rectifier Block

2CL(20-300)KV/0.1A

Type Peak reverse repetitive voltage VRRM Forward average rectifier current If（AV) Max forward voltage Vfm Max forward surge current Ifsm Normal temperature leakage current Irrm Time of reverse recovery trr Dimension Type KV A ...

2CL(10-300)KV/1.0A High Voltage Rectifier Block

2CL(10-300)KV/1.0A

Type Peak reverse repetitive voltage VRRM Forward average rectifier current If（AV) Max forward voltage Vfm Max forward surge current Ifsm Normal temperature leakage current Irrm Time of reverse recovery trr Dimension Type KV A ...

2CL(8-250)KV/5.0A High Voltage Rectifier Block

2CL(8-250)KV/5.0A

Type Peak reverse repetitive voltage VRRM Forward average rectifier current If（AV) Max forward voltage Vfm Max forward surge current Ifsm Normal temperature leakage current Irrm Time of reverse recovery trr Dimension Type KV A ...

2CL(5-150)KV/15.0A High Voltage Rectifier Block

2CL(5-150)KV/15.0A

Type Peak reverse repetitive voltage VRRM Forward average rectifier current If（AV) Max forward voltage Vfm Max forward surge current Ifsm Normal temperature leakage current Irrm Time of reverse recovery trr Dimension Type KV A V...