ICE11N70FP　データシート

ICE11N70FP ICE11N70FP Product Summary N-Channel ID TC=25oC 11A Max Enhancement Mode MOSFET V(BR)DSS ID=250uA 700V Min rDS(on) VGS=10V 0.24Ω Typ Features Qg VDS=480V 81nC Typ • Low rDS(on) • Ultra Low Gate Charge D • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability G • Increased transconductance performance • Optimized design for high performance power systems S T0220FP Isolated (T0-220) 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25oC 11 Continuous drain current ID A Tc=100oC 4.4 Pulsed drain current ID, pulse Tc=25oC 35 A Avalanche energy, single pulse E AS ID=5A 125 mJ Avalanche current, repetitive I AR limited by Tjmax 5 A VDS=480V, ID=11A, MOSFET dv/dt ruggedness dv/dt 5 Tj=125o 0 V/ns C Static ±20 Gate source voltage VGS V AC (f>1Hz) ±30 Power dissipation Ptot Tc=25oC 35 W o Operating and storage temperature Tj, Tstg -55 to +150 C Mounting torque M 3 screws 50 Ncm a When mounted on 1inch square 2oz copper clad FR-4 b limited by Tjmax SP-11N70FP-000-11 1 11/10/2022

ICE11N70FP Values Parameter Symbol Conditions Unit Min Typ Max Thermal characteristics Thermal resistance, junction- R case thJC a - - 3.5 oC/W Thermal resistance, junction- R leaded ambient thJA a - - 72 Soldering temperature, wave T 1.6mm (0.063in.) from soldering only allowed at leads sold case for 10 s - - 260 oC Electrical characteristics at Tj=25oC, unless otherwise specified Static characteristics Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250µA 700 760 - V Gate threshold voltage VGS(th) VDS=VGS, ID=250µA 2.5 3.1 3.5 VDS=700V, VGS=0V, T o .1 1 j=25 C - 0 Zero gate voltage drain current IDSS µA VDS=700V, VGS=0V, - 00 - Tj=150o 1 C Gate source leakage current IGSS VGS=±20 V, VDS=0V - - 100 nA VGS=10V, ID=5.5A, - T 4 0.27 Drain-source j=25oC 0.2 on-state resistance RDS (on) Ω VGS=10V, ID=5.5A, - T 0.66 - j=150oC Gate resistance RG f=1 MHZ, open drain - 3.4 - Ω Dynamic characteristics Input capacitance Ciss VDS=25 V - 2624 - V Output capacitance C GS=0 V, oss V =100 V - 100 - f=1 MHz DS pF Reverse transfer capacitance Crss VDS=25 V - 2.7 - Transconductance gfs VDS>2*ID*RDS, ID=5.5A - 13 - S Turn-on delay time td(on) - 38 - Rise time t VDS=380V, VGS=10V, r - 12 - ID=5.5A, RG=4Ω ns Turn-off delay time td(off) (External) - 131 - Fall time tf - 11 - SP-11N70FP-000-11 2 11/10/2022

ICE11N70FP Values Parameter Symbol Conditions Unit Min Typ Max Gate charge characteristics Gate to source charge Qgs - 14 - Gate to drain charge Qgd V V, I - nC DS=480 D=11A, 29 - Gate charge total Q VGS=0 to 10 V g - 81 - Gate plateau voltage Vplateau - 5.2 - V Reverse Diode Continuous forward current IS VGS=0V - - 11 A Diode forward voltage VSD VGS=0V, IS=IF - 1.0 1.2 V Reverse recovery time trr - 408 - ns V Reverse recovery charge Q RR=50V, IS=IF, rr - d 7.5 - µC iFIdt=100 A/µS Peak reverse recovery current Irm - 33 - A SP-11N70FP-000-11 3 11/10/2022

ICE11N70FP SP-11N70FP-000-11 4 11/10/2022

ICE11N70FP SP-11N70FP-000-11 5 11/10/2022

ICE11N70FP Package Outline: TO-220 FullPAK SP-11N70FP-000-11 6 11/10/2022

ICE11N70FP Package Outline: TO-220 FullPAK SP-11N70FP-000-11 7 11/10/2022

ICE11N70FP ICEMOS SUPERJUNCTION PATENT PORTFOLIO ICEMOS GRANTED PATENTS US7,429,772 US7,439,178 US7,446,018 US7,579,607 US7,723,172 US7,795,045 US7,846,821 US7,944,018 US8,012,806 US8,030,133 3D SEMI PATENTS LICENSED TO ICEMOS US7,041,560B2 US7,023,069B2 US7,364,994 US7,227,197B2 US7,304,944B2 US7,052,982B2 US7,339,252 US7,410,891 US7,439,583 US7,227,197B2 US6,635,906 US6,936,867 US7,015,104 US9,109,110 US7,271,067 US7,354,818 US7,052,982, US7,199,006B2 Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries. SP-11N70FP-000-11 8 11/10/2022

ICE11N70FP Marking Information YY = Last two digits of the year WW = Work week * = Site ID YYWW * XXXXX ICE11N70 XXXXX = Lot ID ICE11N70 = ICE is IceMOS logo and 11N70 is a designated device part number Disclaimer Information contained in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics. All product, data sheet are subject to change without notice to improve reliability. ICEMOS technology will not be responsible for damages of any nature resulting from the use or reliance upon the information contained in this data sheet. SP-11N70FP-000-11 9 11/10/2022